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dc.contributor.authorSchulze, Andreas
dc.contributor.authorHan, Han
dc.contributor.authorStrakos, Libor
dc.contributor.authorVystavel, Tomas
dc.contributor.authorPorret, Clément
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-26T03:31:24Z
dc.date.available2021-10-26T03:31:24Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31747
dc.sourceIIOimport
dc.titleAscertaining the nature and distribution of extended crystalline defects in emerging semiconductor materials using electron channeling constrast imaging
dc.typeProceedings paper
dc.contributor.imecauthorHan, Han
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecHan, Han::0000-0003-2169-8332
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage387
dc.source.endpage396
dc.source.conferenceSiGe, Ge, and Related Materials: Materials, Processing, and Devices 8
dc.source.conferencedate30/09/2018
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttp://ecst.ecsdl.org/content/86/7/387.full.pdf+html
imec.availabilityPublished - open access
imec.internalnotesECS Transaction; Vol. 86, Issue 7


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