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Cleaning the high aspect ratio STI structures for advanced logic devices by implementation of a surface modification drying technique

dc.contributor.authorSebaai, Farid
dc.contributor.authorVereecke, Guy
dc.contributor.authorXu, XiuMei
dc.contributor.authorBaudot, Sylvain
dc.contributor.authorAmemiya, Fumihiro
dc.contributor.authorKomori, Kana
dc.contributor.authorHolsteyns, Frank
dc.date.accessioned2021-10-26T03:35:51Z
dc.date.available2021-10-26T03:35:51Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31754
dc.sourceIIOimport
dc.titleCleaning the high aspect ratio STI structures for advanced logic devices by implementation of a surface modification drying technique
dc.typeMeeting abstract
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorVereecke, Guy
dc.contributor.imecauthorXu, XiuMei
dc.contributor.imecauthorBaudot, Sylvain
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecVereecke, Guy::0000-0001-9058-9338
dc.contributor.orcidimecXu, XiuMei::0000-0002-3356-8693
dc.source.peerreviewyes
dc.source.beginpage190
dc.source.endpage193
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XIV - UCPSS
dc.source.conferencedate2/09/2018
dc.source.conferencelocationLeuven Belgium
dc.identifier.urlhttps://www.scientific.net/SSP.282.190
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol. 282


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