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Implementation of a novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H with efficiencies close to 23%

dc.contributor.authorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.authorGius Uddin, M.D.
dc.contributor.authorXu, Menglei
dc.contributor.authorCho, Jinyoun
dc.contributor.authorGhannam, Moustafa
dc.contributor.authorGordon, Ivan
dc.contributor.authorSzlufcik, Jozef
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-26T04:06:29Z
dc.date.available2021-10-26T04:06:29Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31802
dc.sourceIIOimport
dc.titleImplementation of a novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H with efficiencies close to 23%
dc.typeProceedings paper
dc.contributor.imecauthorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.imecauthorCho, Jinyoun
dc.contributor.imecauthorGhannam, Moustafa
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorSzlufcik, Jozef
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecSivaramakrishnan Radhakrishnan, Hariharsudan::0000-0003-1963-273X
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage448
dc.source.endpage451
dc.source.conference35th European Photovoltaic Solar Energy Conference and Exhibition - EUPVSEC
dc.source.conferencedate24/09/2018
dc.source.conferencelocationBrussels Belgium
dc.identifier.urlhttps://www.eupvsec-proceedings.com/proceedings?fulltext=imec&paper=46950
imec.availabilityPublished - imec


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