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Scaling trends toward N3 and beyond: Device architecture and standard cells innovation impact on patterning and layout

dc.contributor.authorSpessot, Alessio
dc.date.accessioned2021-10-26T04:29:05Z
dc.date.available2021-10-26T04:29:05Z
dc.date.issued2018-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31837
dc.sourceIIOimport
dc.titleScaling trends toward N3 and beyond: Device architecture and standard cells innovation impact on patterning and layout
dc.typeProceedings paper
dc.contributor.imecauthorSpessot, Alessio
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage78
dc.source.endpage78
dc.source.conference25th Lithography Workshop
dc.source.conferencedate17/06/2018
dc.source.conferencelocationSun Valley, ID USA
dc.identifier.urlhttps://www.lithoworkshop.org/assets/archive/2018/2018-Lithography-Workshop-Program-Book-v1.2.pdf
imec.availabilityPublished - open access


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