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Area-selective atomic layer deposition of TiN, TiO2, and HfO2 on Si3N4 in Sub-50 nanometer Si3N4/amorphous carbon structures

dc.contributor.authorStevens, Eric
dc.contributor.authorTomczak, Yoann
dc.contributor.authorChan, BT
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorParsons, Gregory
dc.contributor.authorDelabie, Annelies
dc.date.accessioned2021-10-26T04:42:44Z
dc.date.available2021-10-26T04:42:44Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31858
dc.sourceIIOimport
dc.titleArea-selective atomic layer deposition of TiN, TiO2, and HfO2 on Si3N4 in Sub-50 nanometer Si3N4/amorphous carbon structures
dc.typeMeeting abstract
dc.contributor.imecauthorTomczak, Yoann
dc.contributor.imecauthorChan, BT
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.source.peerreviewyes
dc.source.beginpageAS-TuM5
dc.source.conference18th International Conference on Atomic Layer Deposition-ALD. Featuring the 5th International Atomic Layer Etching Workshop
dc.source.conferencedate29/07/2018
dc.source.conferencelocationIncheon South Korea
imec.availabilityPublished - imec


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