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Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit

dc.contributor.authorVan Beek, Simon
dc.contributor.authorRoussel, Philippe
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCosemans, Stefan
dc.contributor.authorLinten, Dimitri
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2021-10-26T06:23:32Z
dc.date.available2021-10-26T06:23:32Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32010
dc.sourceIIOimport
dc.titleStudy of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit
dc.typeProceedings paper
dc.contributor.imecauthorVan Beek, Simon
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorCosemans, Stefan
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecVan Beek, Simon::0000-0002-2499-4172
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage146
dc.source.endpage149
dc.source.conference48th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate3/09/2018
dc.source.conferencelocationDresden Germany
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8486879
imec.availabilityPublished - open access


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