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Pre-Epi Clean of SiGe 20%: GeH4 and HCl vs H2-based in-situ cleaning

dc.contributor.authorWostyn, Kurt
dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorGencarelli, Federica
dc.contributor.authorMasaoku, Toru
dc.contributor.authorIino, Hideaki
dc.contributor.authorYoshida, Yukifumi
dc.contributor.authorKomori, Kana
dc.contributor.authorDouhard, Bastien
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorHolsteyns, Frank
dc.date.accessioned2021-10-26T09:34:31Z
dc.date.available2021-10-26T09:34:31Z
dc.date.issued2018-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32280
dc.sourceIIOimport
dc.titlePre-Epi Clean of SiGe 20%: GeH4 and HCl vs H2-based in-situ cleaning
dc.typeMeeting abstract
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage193
dc.source.endpage194
dc.source.conference9th International SiGe Technology and Device Meeting / 11th International Conference on Silicon Epitaxy and Heterostructures
dc.source.conferencedate27/05/2018
dc.source.conferencelocationPotsdam Germany
imec.availabilityPublished - imec


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