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Low temperature SiGe steam oxide – aqueous HF and NH3/NF3 remote plasma etching and its implementation as Si GAA inner spacer

dc.contributor.authorWostyn, Kurt
dc.contributor.authorKenis, Karine
dc.contributor.authorMertens, Hans
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-26T09:35:19Z
dc.date.available2021-10-26T09:35:19Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32281
dc.sourceIIOimport
dc.titleLow temperature SiGe steam oxide – aqueous HF and NH3/NF3 remote plasma etching and its implementation as Si GAA inner spacer
dc.typeProceedings paper
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage126
dc.source.endpage131
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XIV - UCPSS
dc.source.conferencedate2/09/2018
dc.source.conferencelocationLeuven Belgium
dc.identifier.urlhttps://www.scientific.net/SSP.282.126
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol. 282


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