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Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si

dc.contributor.authorZhao, Simeng
dc.contributor.authorjiang, Rong
dc.contributor.authorWang, Pang
dc.contributor.authorZhang, En Xia
dc.contributor.authorWaldron, Niamh
dc.contributor.authorKunert, Bernadette
dc.contributor.authorMitard, Jerome
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSoncke, Sonja
dc.contributor.authorLinten, Dimitri
dc.contributor.authorSchrimpf, Ronald
dc.contributor.authorReed, Robert
dc.contributor.authorFleetwood, Daniel
dc.date.accessioned2021-10-26T10:48:02Z
dc.date.available2021-10-26T10:48:02Z
dc.date.issued2018-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32380
dc.sourceIIOimport
dc.titleGate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si
dc.typeProceedings paper
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.source.peerreviewyes
dc.source.conferenceRadiation Effects on Components and Systems - RADECS
dc.source.conferencedate16/09/2018
dc.source.conferencelocationGoteborg Sweden
imec.availabilityPublished - imec


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