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Large area EUV via yield analysis for single damascene process: voltage contrast, CD and defect metrology

dc.contributor.authorBlanco, Victor
dc.contributor.authorPaolillo, Sara
dc.contributor.authorvan der Veen, Marleen
dc.contributor.authorLariviere, Stephane
dc.contributor.authorLorusso, Gian
dc.contributor.authorDe Poortere, Etienne
dc.contributor.authorTabery, Cyrus
dc.contributor.authorQiao, Fu
dc.contributor.authorLai, Shu-yu
dc.contributor.authorKea, Marc
dc.contributor.authorWang, Luke
dc.contributor.authorSu, Yu Chi
dc.contributor.authorOh, Joe
dc.contributor.authorHuang, Jim
dc.contributor.authorChen, Jimmy
dc.contributor.authorHuang, Jonathan
dc.date.accessioned2021-10-27T07:37:40Z
dc.date.available2021-10-27T07:37:40Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32566
dc.sourceIIOimport
dc.titleLarge area EUV via yield analysis for single damascene process: voltage contrast, CD and defect metrology
dc.typeProceedings paper
dc.contributor.imecauthorBlanco, Victor
dc.contributor.imecauthorPaolillo, Sara
dc.contributor.imecauthorvan der Veen, Marleen
dc.contributor.imecauthorLariviere, Stephane
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorDe Poortere, Etienne
dc.contributor.imecauthorKea, Marc
dc.contributor.orcidimecvan der Veen, Marleen::0000-0002-9402-8922
dc.source.peerreviewyes
dc.source.beginpage11147OB
dc.source.conferenceInternational Conference on Extreme Ultraviolet Lithography 2019
dc.source.conferencedate16/09/2019
dc.source.conferencelocationMonterey, CA USA
dc.identifier.urlhttps://doi.org/10.1117/12.2536943
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 11147


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