dc.contributor.author | Bougrioua, Zahia | |
dc.contributor.author | Farvacque, J. L. | |
dc.contributor.author | Moerman, Ingrid | |
dc.contributor.author | Demeester, Piet | |
dc.contributor.author | Harris, J. J. | |
dc.contributor.author | Lee, K. | |
dc.contributor.author | Van Tendeloo, G. | |
dc.contributor.author | Lebedev, O. | |
dc.contributor.author | Thrush, E. J. | |
dc.date.accessioned | 2021-10-06T10:44:42Z | |
dc.date.available | 2021-10-06T10:44:42Z | |
dc.date.issued | 1999 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/3260 | |
dc.source | IIOimport | |
dc.title | Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE | |
dc.type | Meeting abstract | |
dc.contributor.imecauthor | Moerman, Ingrid | |
dc.contributor.imecauthor | Demeester, Piet | |
dc.contributor.orcidimec | Moerman, Ingrid::0000-0003-2377-3674 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 124 | |
dc.source.conference | 3rd International Conference on Nitride Semiconductors - ICNS3 | |
dc.source.conferencedate | 04/07/1999 | |
dc.source.conferencelocation | Montpellier France | |
imec.availability | Published - open access | |