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Influence of growth temperature on electrical characteristics of silicon doped GaAn grown by LP-MOVPE
Publication:
Influence of growth temperature on electrical characteristics of silicon doped GaAn grown by LP-MOVPE
Date
1999
Proceedings Paper
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3224.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Bougrioua, Zahia
;
Moerman, Ingrid
;
Demeester, Piet
;
Thrush, E. J.
;
Guyaux, J. L.
;
Garcia, J. C.
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1913
since deposited on 2021-10-06
2
last month
Acq. date: 2025-12-08
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Metrics
Views
1913
since deposited on 2021-10-06
2
last month
Acq. date: 2025-12-08
Citations