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Influence of growth temperature on electrical characteristics of silicon doped GaAn grown by LP-MOVPE

dc.contributor.authorBougrioua, Zahia
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorThrush, E. J.
dc.contributor.authorGuyaux, J. L.
dc.contributor.authorGarcia, J. C.
dc.date.accessioned2021-10-06T10:44:51Z
dc.date.available2021-10-06T10:44:51Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3262
dc.sourceIIOimport
dc.titleInfluence of growth temperature on electrical characteristics of silicon doped GaAn grown by LP-MOVPE
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage61
dc.source.endpage63
dc.source.conferenceProceedings of the 8th European Workshop on MOVPE
dc.source.conferencedate08/06/1999
dc.source.conferencelocationPrague Czech Republic
imec.availabilityPublished - open access


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