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ICP and ICPsm process development, a) dry strip only, b) low temperature SiC oxidation removal

dc.contributor.authorBoullart, Werner
dc.contributor.authorMannaert, Geert
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorShamiryam, D.
dc.contributor.authorVanhaelemeersch, Serge
dc.date.accessioned2021-10-06T10:44:55Z
dc.date.available2021-10-06T10:44:55Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3263
dc.sourceIIOimport
dc.titleICP and ICPsm process development, a) dry strip only, b) low temperature SiC oxidation removal
dc.typeOral presentation
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.conferenceMattson Technical Seminar, 2nd Edition; 30 September 1999;
imec.availabilityPublished - imec


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