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Post metal etch polymer removal: an investigation of the cleaning to remove residual of Si-C and Si-F after fluorocarbon plama etch on the silicon surface

dc.contributor.authorBoullart, Werner
dc.contributor.authorMannaert, Geert
dc.contributor.authorGraham, S.
dc.contributor.authorTarassenko, C.
dc.contributor.authorMouche, Laurent
dc.date.accessioned2021-10-06T10:45:00Z
dc.date.available2021-10-06T10:45:00Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3264
dc.sourceIIOimport
dc.titlePost metal etch polymer removal: an investigation of the cleaning to remove residual of Si-C and Si-F after fluorocarbon plama etch on the silicon surface
dc.typeProceedings paper
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorMannaert, Geert
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage283
dc.source.endpage286
dc.source.conferenceUltra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon
dc.source.conferencedate21/09/1998
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena; Vols. 65-66


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