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Transient overshoot of sub-10nm bulk FinFET ESD diodes with S/D epitaxy stressor

dc.contributor.authorChen, Shih-Hung
dc.contributor.authorLinten, Dimitri
dc.contributor.authorHellings, Geert
dc.contributor.authorSimicic, Marko
dc.contributor.authorChiarella, Thomas
dc.contributor.authorEyben, Pierre
dc.contributor.authorKubicek, Stefan
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-27T07:59:51Z
dc.date.available2021-10-27T07:59:51Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32695
dc.sourceIIOimport
dc.titleTransient overshoot of sub-10nm bulk FinFET ESD diodes with S/D epitaxy stressor
dc.typeProceedings paper
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorSimicic, Marko
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecSimicic, Marko::0000-0002-3623-1842
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage8
dc.source.conference2019 41st Annual EOS/ESD Symposium (EOS/ESD)
dc.source.conferencedate11/09/2019
dc.source.conferencelocationRiverside, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8870001
imec.availabilityPublished - open access


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