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Imec's defect reduction strategies for EUV single exposed 32nm pitch line and space patterns

dc.contributor.authorFoubert, Philippe
dc.contributor.authorDe Bisschop, Peter
dc.contributor.authorBekaert, Joost
dc.contributor.authorBeral, Christophe
dc.contributor.authorRincon Delgadillo, Paulina
dc.date.accessioned2021-10-27T09:16:48Z
dc.date.available2021-10-27T09:16:48Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32973
dc.sourceIIOimport
dc.titleImec's defect reduction strategies for EUV single exposed 32nm pitch line and space patterns
dc.typeProceedings paper
dc.contributor.imecauthorFoubert, Philippe
dc.contributor.imecauthorDe Bisschop, Peter
dc.contributor.imecauthorBekaert, Joost
dc.contributor.imecauthorBeral, Christophe
dc.contributor.imecauthorRincon Delgadillo, Paulina
dc.contributor.orcidimecBekaert, Joost::0000-0003-3075-3479
dc.contributor.orcidimecBeral, Christophe::0000-0003-1356-9186
dc.identifier.doi10.1117/12.2539592
dc.source.peerreviewyes
dc.source.beginpage1114715
dc.source.conferenceInternational Conference on Extreme Ultraviolet Lithography 2019
dc.source.conferencedate16/09/2019
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 11147


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