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On the impact of reduced thermal budget on HfO2 electron trap and SiO2 hole trap defect bands in RMG gate stacks for sequential 3D CMOS integration

dc.contributor.authorFranco, Jacopo
dc.contributor.authorWu, Zhicheng
dc.contributor.authorClaes, Dieter
dc.contributor.authorVandooren, Anne
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGrasser, Tibor
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-27T09:17:55Z
dc.date.available2021-10-27T09:17:55Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32976
dc.sourceIIOimport
dc.titleOn the impact of reduced thermal budget on HfO2 electron trap and SiO2 hole trap defect bands in RMG gate stacks for sequential 3D CMOS integration
dc.typeMeeting abstract
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorWu, Zhicheng
dc.contributor.imecauthorClaes, Dieter
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpage7.2
dc.source.conferenceIEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate12/12/2019
dc.source.conferencelocationSan Diego, CA USA
dc.identifier.urlhttps://www.ieeesisc.org/programs/2019_SISC_technical_program.pdf
imec.availabilityPublished - imec


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