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Impact of 60 MeV proton irradiations on the 4.2K characteristics of 0.7 µm cryo CMOS transistors

dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMohammadzadeh, A.
dc.date.accessioned2021-10-06T10:48:18Z
dc.date.available2021-10-06T10:48:18Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3299
dc.sourceIIOimport
dc.titleImpact of 60 MeV proton irradiations on the 4.2K characteristics of 0.7 µm cryo CMOS transistors
dc.typeMeeting abstract
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1192
dc.source.conferenceElectrochemical Society Fall Meeting: 5th Symposium on Low Temperature Electronics
dc.source.conferencedate17/10/1999
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesMeeting Abstracts; Vol. 99-2


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