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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

dc.contributor.authorHsu, Brent
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLin, Dennis
dc.contributor.authorStesmans, Andre
dc.contributor.authorGoux, Ludovic
dc.contributor.authorDelhougne, Romain
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2021-10-27T10:33:50Z
dc.date.available2021-10-27T10:33:50Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33171
dc.sourceIIOimport
dc.titleA deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
dc.typeProceedings paper
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpage45
dc.source.endpage55
dc.source.conferenceSemiconductors, Dielectrics, and Metals for Nanoelectronics 17
dc.source.conferencedate13/10/2019
dc.source.conferencelocationAtlanta, GA USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/92/1/45.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Trans.2019 volume 92, issue 1, 45-55


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