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First–principles parameter–free modeling of n– and p–FET hot–carrier degradation

dc.contributor.authorJech, Markus
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorJabs, Dominic
dc.contributor.authorJungemann, Christoph
dc.contributor.authorWaltl, Michael
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-27T10:55:30Z
dc.date.available2021-10-27T10:55:30Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33221
dc.sourceIIOimport
dc.titleFirst–principles parameter–free modeling of n– and p–FET hot–carrier degradation
dc.typeProceedings paper
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.source.peerreviewyes
dc.source.beginpage24.1.1
dc.source.endpage24.1.4
dc.source.conferenceIEEE International Electron Device Meeting – IEDM
dc.source.conferencedate7/12/2019
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8993630
imec.availabilityPublished - imec


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