First–principles parameter–free modeling of n– and p–FET hot–carrier degradation

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Authors
Jech, Markus; Tyaginov, Stanislav; Kaczer, Ben; Franco, Jacopo; Jabs, Dominic; Jungemann, Christoph; Waltl, Michael; Grasser, Tibor
Conference
IEEE International Electron Device Meeting – IEDM
Title
First–principles parameter–free modeling of n– and p–FET hot–carrier degradation
Publication type
Proceedings paper
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