Publication:
First–principles parameter–free modeling of n– and p–FET hot–carrier degradation
Date
| dc.contributor.author | Jech, Markus | |
| dc.contributor.author | Tyaginov, Stanislav | |
| dc.contributor.author | Kaczer, Ben | |
| dc.contributor.author | Franco, Jacopo | |
| dc.contributor.author | Jabs, Dominic | |
| dc.contributor.author | Jungemann, Christoph | |
| dc.contributor.author | Waltl, Michael | |
| dc.contributor.author | Grasser, Tibor | |
| dc.contributor.imecauthor | Tyaginov, Stanislav | |
| dc.contributor.imecauthor | Kaczer, Ben | |
| dc.contributor.imecauthor | Franco, Jacopo | |
| dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
| dc.contributor.orcidimec | Franco, Jacopo::0000-0002-7382-8605 | |
| dc.date.accessioned | 2021-10-27T10:55:30Z | |
| dc.date.available | 2021-10-27T10:55:30Z | |
| dc.date.issued | 2019 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/33221 | |
| dc.identifier.url | https://ieeexplore.ieee.org/document/8993630 | |
| dc.source.beginpage | 24.1.1 | |
| dc.source.conference | IEEE International Electron Device Meeting – IEDM | |
| dc.source.conferencedate | 7/12/2019 | |
| dc.source.conferencelocation | San Francisco, CA USA | |
| dc.source.endpage | 24.1.4 | |
| dc.title | First–principles parameter–free modeling of n– and p–FET hot–carrier degradation | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
| Publication available in collections: |