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Origin of the substrate current after soft-breakdown in thin oxide n-MOSFETs

dc.contributor.authorCrupi, Felice
dc.contributor.authorIannaccone, G.
dc.contributor.authorNeri, B.
dc.contributor.authorCrupi, Isodiana
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-06T10:51:12Z
dc.date.available2021-10-06T10:51:12Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3324
dc.sourceIIOimport
dc.titleOrigin of the substrate current after soft-breakdown in thin oxide n-MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage77
dc.source.endpage80
dc.source.conferenceIFPA '99 - Proceedings of the 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits;
imec.availabilityPublished - imec


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