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Statistical significance of STEM based metrology on advanced 3D transistor structures

dc.contributor.authorKwakman, Laurens
dc.contributor.authorKenslea, Anne
dc.contributor.authorJohanesen, Hayley
dc.contributor.authorStrauss, Michael
dc.contributor.authorBoullart, Werner
dc.contributor.authorMertens, Hans
dc.contributor.authorSiew, Yong Kong
dc.contributor.authorBarla, Kathy
dc.date.accessioned2021-10-27T11:55:20Z
dc.date.available2021-10-27T11:55:20Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33350
dc.sourceIIOimport
dc.titleStatistical significance of STEM based metrology on advanced 3D transistor structures
dc.typeProceedings paper
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorSiew, Yong Kong
dc.contributor.imecauthorBarla, Kathy
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage109590C
dc.source.conferenceMetrology, Inspection, and Process Control for Microlithography XXXIII
dc.source.conferencedate24/02/2019
dc.source.conferencelocationSan Jose, CA USA
dc.identifier.urlhttps://doi.org/10.1117/12.2514963
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 10959


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