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On correlation between hot-carrier stress induced device parameter degradation and time-zero variability

dc.contributor.authorMakarov, Alexander
dc.contributor.authorRoussel, Philippe
dc.contributor.authorBury, Erik
dc.contributor.authorVandemaele, Michiel
dc.contributor.authorSpessot, Alessio
dc.contributor.authorLinten, Dimitri
dc.contributor.authorKaczer, Ben
dc.contributor.authorTyaginov, Stanislav
dc.date.accessioned2021-10-27T13:18:57Z
dc.date.available2021-10-27T13:18:57Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33514
dc.sourceIIOimport
dc.titleOn correlation between hot-carrier stress induced device parameter degradation and time-zero variability
dc.typeProceedings paper
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorVandemaele, Michiel
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecVandemaele, Michiel::0000-0003-0740-4115
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conferenceInternational Integrated Reliability Workshop 2019 - IIRW
dc.source.conferencedate13/10/2019
dc.source.conferencelocationSouth Lake Tahoe, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/abstract/document/8989882
imec.availabilityPublished - imec


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