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Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials

dc.contributor.authorMargetis, Joe
dc.contributor.authorKohen, David
dc.contributor.authorPorret, Clément
dc.contributor.authorPetersen Barbosa Lima, Lucas
dc.contributor.authorKhazaka, Rami
dc.contributor.authorRengo, Gianluca
dc.contributor.authorLoo, Roger
dc.contributor.authorTolle, John
dc.contributor.authorDemos, Alex
dc.date.accessioned2021-10-27T13:30:26Z
dc.date.available2021-10-27T13:30:26Z
dc.date.issued2019-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33535
dc.sourceIIOimport
dc.titleEpitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials
dc.typeProceedings paper
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorPetersen Barbosa Lima, Lucas
dc.contributor.imecauthorKhazaka, Rami
dc.contributor.imecauthorRengo, Gianluca
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage7
dc.source.endpage10
dc.source.conference2nd Joint ISTDM / ICSI 2019 Conference
dc.source.conferencedate2/06/2019
dc.source.conferencelocationMadison USA
dc.identifier.urlhttp://ecst.ecsdl.org/content/93/1/7.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 93, issue 1


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