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Understanding and variability of lateral charge migration in 3D CT-NAND flash with and without band-gap engineered barriers

dc.contributor.authorPadovani, Andrea
dc.contributor.authorPesic, Milan
dc.contributor.authorAnik Kumar, Mondol
dc.contributor.authorBlomme, Pieter
dc.contributor.authorSubirats, Alexandre
dc.contributor.authorVadakupudhu Palayam, Senthil
dc.contributor.authorBaten, Zunaid
dc.contributor.authorLarcher, Luca
dc.contributor.authorVan den Bosch, Geert
dc.date.accessioned2021-10-27T15:17:52Z
dc.date.available2021-10-27T15:17:52Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33721
dc.sourceIIOimport
dc.titleUnderstanding and variability of lateral charge migration in 3D CT-NAND flash with and without band-gap engineered barriers
dc.typeProceedings paper
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVadakupudhu Palayam, Senthil
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage7C.1
dc.source.conference2019 IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate31/03/2019
dc.source.conferencelocationMonterey, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8720566
imec.availabilityPublished - open access


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