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Plasma etch selectivity study and material screening for Self-Aligned Gate Contact (SAGC)

dc.contributor.authorRadisic, Dunja
dc.contributor.authorDemand, Marc
dc.contributor.authorChan, Shihsheng
dc.contributor.authorDemuynck, Steven
dc.contributor.authorKumar, Kaushik
dc.contributor.authorMetz, Andrew
dc.contributor.authorTeugels, Lieve
dc.contributor.authorSun, Junling
dc.contributor.authorSmith, Jeffrey
dc.contributor.authorSebaai, Farid
dc.contributor.authorHopf, Toby
dc.contributor.authorAltamirano Sanchez, Efrain
dc.date.accessioned2021-10-27T16:36:43Z
dc.date.available2021-10-27T16:36:43Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33848
dc.sourceIIOimport
dc.titlePlasma etch selectivity study and material screening for Self-Aligned Gate Contact (SAGC)
dc.typeProceedings paper
dc.contributor.imecauthorRadisic, Dunja
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorKumar, Kaushik
dc.contributor.imecauthorTeugels, Lieve
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorHopf, Toby
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage109630P
dc.source.conferenceAdvanced Etch Technology for Nanopatterning VIII
dc.source.conferencedate24/02/2019
dc.source.conferencelocationSan Jose, CA USA
dc.identifier.urlhttps://doi.org/10.1117/12.2505129
imec.availabilityPublished - open access
imec.internalnotesProceedings of PIE; Vol. 10963


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