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dc.contributor.authorDe Witte, Hilde
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDouglas, M.
dc.contributor.authorConard, Thierry
dc.contributor.authorKenis, Karine
dc.contributor.authorMertens, Paul
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorGijbels, Renaat
dc.date.accessioned2021-10-06T10:59:08Z
dc.date.available2021-10-06T10:59:08Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3384
dc.sourceIIOimport
dc.titleCapablities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution
dc.typeProceedings paper
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage147
dc.source.endpage159
dc.source.conferenceAnalytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes
dc.source.conferencedate16/09/1999
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. PV 99-16


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