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Physical modeling of bias temperature instabilities in SiC MOSFETs

dc.contributor.authorSchleich, Christian
dc.contributor.authorBerens, Judith
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorPobegen, Gregor
dc.contributor.authorRescher, Gerald
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorGrasser, Tibor
dc.contributor.authorWaltl, Michael
dc.date.accessioned2021-10-27T17:43:56Z
dc.date.available2021-10-27T17:43:56Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33952
dc.sourceIIOimport
dc.titlePhysical modeling of bias temperature instabilities in SiC MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorTyaginov, Stanislav
dc.source.peerreviewyes
dc.source.beginpage20.5.1
dc.source.endpage20.5.4
dc.source.conferenceIEEE International Electron Device Meeting -- IEDM
dc.source.conferencedate7/12/2019
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8993446
imec.availabilityPublished - imec


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