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Analysis of high voltage TDDB measurements on Ta2O5/SiO2 stack

dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorHoussa, Michel
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.contributor.authorJeon, J. S.
dc.contributor.authorHalliyal, A.
dc.date.accessioned2021-10-06T11:00:56Z
dc.date.available2021-10-06T11:00:56Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3396
dc.sourceIIOimport
dc.titleAnalysis of high voltage TDDB measurements on Ta2O5/SiO2 stack
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage327
dc.source.endpage330
dc.source.conferenceInternational Electron Devices Meeting. Technical digest; December 1999; Washington, D.C.
imec.availabilityPublished - imec


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