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Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability

dc.contributor.authorDegraeve, Robin
dc.contributor.authorPangon, Nadège
dc.contributor.authorKaczer, Ben
dc.contributor.authorNigam, Tanya
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorNaem, Abdalla
dc.date.accessioned2021-10-06T11:01:06Z
dc.date.available2021-10-06T11:01:06Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3397
dc.sourceIIOimport
dc.titleTemperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.beginpage59
dc.source.endpage60
dc.source.conferenceSymposium on VLSI Technology: Technical Digest; June 1999; Kyoto, Japan.
imec.availabilityPublished - imec


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