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Can we optimize the gate oxide quality of DRAM input/output pMOSFETs by a post-deposition treatment?
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Can we optimize the gate oxide quality of DRAM input/output pMOSFETs by a post-deposition treatment?
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Date
2019
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
O'Sullivan, Barry
;
Ritzenthaler, Romain
;
Dentoni Litta, Eugenio
;
Schram, Tom
;
Horiguchi, Naoto
;
Claeys, Cor
Journal
Semiconductor Science and Technology
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2008
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Views
2008
since deposited on 2021-10-27
1
last month
1
last week
Acq. date: 2026-01-07
Citations