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Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contacted pitch and 250μA/μm drain current

dc.contributor.authorSmets, Quentin
dc.contributor.authorArutchelvan, Goutham
dc.contributor.authorJussot, Julien
dc.contributor.authorVerreck, Devin
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorNalin Mehta, Ankit
dc.contributor.authorGaur, Abhinav
dc.contributor.authorLin, Dennis
dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorGroven, Benjamin
dc.contributor.authorCaymax, Matty
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2021-10-27T18:39:48Z
dc.date.available2021-10-27T18:39:48Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34035
dc.sourceIIOimport
dc.titleUltra-scaled MOCVD MoS2 MOSFETs with 42nm contacted pitch and 250μA/μm drain current
dc.typeProceedings paper
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorArutchelvan, Goutham
dc.contributor.imecauthorJussot, Julien
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorNalin Mehta, Ankit
dc.contributor.imecauthorGaur, Abhinav
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecJussot, Julien::0000-0002-2484-3462
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecNalin Mehta, Ankit::0000-0002-2169-940X
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecAsselberghs, Inge::0000-0001-8371-3222
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage550
dc.source.endpage553
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2019
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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