Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs

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Authors
Stockman, Arno; Canato, Eleonora; Meneghini, Matteo; Meneghesso, Gaudenzio; Moens, Peter; Bakeroot, Benoit
Conference
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Title
Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs
Publication type
Proceedings paper
Embargo date
9999-12-31
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