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Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs

dc.contributor.authorStockman, Arno
dc.contributor.authorCanato, Eleonora
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorMoens, Peter
dc.contributor.authorBakeroot, Benoit
dc.date.accessioned2021-10-27T19:03:53Z
dc.date.available2021-10-27T19:03:53Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34071
dc.sourceIIOimport
dc.titleThreshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs
dc.typeProceedings paper
dc.contributor.imecauthorStockman, Arno
dc.contributor.imecauthorMoens, Peter
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage287
dc.source.endpage289
dc.source.conference2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
dc.source.conferencedate19/05/2019
dc.source.conferencelocationShanghai China
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8757667
imec.availabilityPublished - open access


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