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Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

dc.contributor.authorStoffels, Steve
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorTallarico, Andrea Natale
dc.contributor.authorSangiorgi, Enrico
dc.contributor.authorFiegna, Claudio
dc.contributor.authorZheng, Jiaxin
dc.contributor.authorMa, X.
dc.contributor.authorBorga, Matteo
dc.contributor.authorFabris, Elena
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorPriesol, Juraj
dc.contributor.authorSatka, Alexander
dc.date.accessioned2021-10-27T19:04:43Z
dc.date.available2021-10-27T19:04:43Z
dc.date.issued2019-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34072
dc.sourceIIOimport
dc.titlePerimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
dc.typeProceedings paper
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorFabris, Elena
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecFabris, Elena::0000-0003-1345-5111
dc.source.peerreviewyes
dc.source.beginpage4D4.1
dc.source.endpage4D4.10
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedate31/03/2019
dc.source.conferencelocationMonterey, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8720411
imec.availabilityPublished - imec


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