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Evaluation of room temperature wafer bonding by fabrication of a GaAs/Pt/Si metal base transistor

dc.contributor.authorDessein, Kristof
dc.contributor.authorNemeth, Stefan
dc.contributor.authorVlutters, R.
dc.contributor.authorDelaey, L.
dc.contributor.authorDe Boeck, Jo
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-06T11:03:33Z
dc.date.available2021-10-06T11:03:33Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3413
dc.sourceIIOimport
dc.titleEvaluation of room temperature wafer bonding by fabrication of a GaAs/Pt/Si metal base transistor
dc.typeProceedings paper
dc.contributor.imecauthorNemeth, Stefan
dc.contributor.imecauthorDe Boeck, Jo
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage280
dc.source.endpage283
dc.source.conferenceESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference
dc.source.conferencedate13/09/1999
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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