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Compact model of the entire I-V characteristic for accurate description of the asymmetric degradation of pMOSFETs during off-state stress

dc.contributor.authorTruijen, Brecht
dc.contributor.authorFranco, Jacopo
dc.contributor.authorRoussel, Philippe
dc.contributor.authorLinten, Dimitri
dc.date.accessioned2021-10-27T19:53:31Z
dc.date.available2021-10-27T19:53:31Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34143
dc.sourceIIOimport
dc.titleCompact model of the entire I-V characteristic for accurate description of the asymmetric degradation of pMOSFETs during off-state stress
dc.typeProceedings paper
dc.contributor.imecauthorTruijen, Brecht
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecTruijen, Brecht::0000-0002-2288-1414
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.source.peerreviewyes
dc.source.conference2019 IEEE International Integrated Reliability Workshop (IIRW)
dc.source.conferencedate13/10/2019
dc.source.conferencelocationSouth Lake Tahoe, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8989890
imec.availabilityPublished - imec


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