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The influence of Ti capping layers on CoSi2 formation in the presence of interfacial oxide

dc.contributor.authorDetavernier, C.
dc.contributor.authorAlves Donaton, Ricardo
dc.contributor.authorMaex, Karen
dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorVan Meirhaeghe, R.
dc.contributor.authorCardon, F.
dc.date.accessioned2021-10-06T11:03:43Z
dc.date.available2021-10-06T11:03:43Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3414
dc.sourceIIOimport
dc.titleThe influence of Ti capping layers on CoSi2 formation in the presence of interfacial oxide
dc.typeProceedings paper
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorBender, Hugo
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage139
dc.source.endpage144
dc.source.conferenceAdvanced Interconnects and Contacts
dc.source.conferencedate05/04/1999
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 564


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