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Physics-based modeling of hot-carrier degradation in Ge NWFETs

dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorMakarov, A.
dc.contributor.authorEl-Sayed, A.
dc.contributor.authorJech, M.
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorEneman, Geert
dc.contributor.authorVandemaele, Michiel
dc.contributor.authorFranco, Jacopo
dc.contributor.authorLinten, Dimitri
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-27T20:05:49Z
dc.date.available2021-10-27T20:05:49Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34161
dc.sourceIIOimport
dc.titlePhysics-based modeling of hot-carrier degradation in Ge NWFETs
dc.typeProceedings paper
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVandemaele, Michiel
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecVandemaele, Michiel::0000-0003-0740-4115
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage565
dc.source.endpage566
dc.source.conferenceInternational Conference on Solid-State Devices and Materials - SSDM
dc.source.conferencedate2/09/2019
dc.source.conferencelocationNagoya Japan
imec.availabilityPublished - open access


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