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Metastable and stable transistion-metal silicide layer formation in Si and SiGe

dc.contributor.authorDézsi, I.
dc.contributor.authorFetzer, C.
dc.contributor.authorBill, E.
dc.contributor.authorCaymax, Matty
dc.contributor.authorPattyn, Hugo
dc.contributor.authorDegroote, Sven
dc.contributor.authorLangouche, G.
dc.contributor.authorVantomme, Andre
dc.date.accessioned2021-10-06T11:04:31Z
dc.date.available2021-10-06T11:04:31Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3419
dc.sourceIIOimport
dc.titleMetastable and stable transistion-metal silicide layer formation in Si and SiGe
dc.typeOral presentation
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorPattyn, Hugo
dc.contributor.imecauthorVantomme, Andre
dc.source.peerreviewno
dc.source.conferenceInternational Conference on the Application of the Mössbauer Effect; August 1999; Garmisch-Partenkirchen.
imec.availabilityPublished - imec


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