Metastable and stable transistion-metal silicide layer formation in Si and SiGe
dc.contributor.author | Dézsi, I. | |
dc.contributor.author | Fetzer, C. | |
dc.contributor.author | Bill, E. | |
dc.contributor.author | Caymax, Matty | |
dc.contributor.author | Pattyn, Hugo | |
dc.contributor.author | Degroote, Sven | |
dc.contributor.author | Langouche, G. | |
dc.contributor.author | Vantomme, Andre | |
dc.date.accessioned | 2021-10-06T11:04:31Z | |
dc.date.available | 2021-10-06T11:04:31Z | |
dc.date.issued | 1999 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/3419 | |
dc.source | IIOimport | |
dc.title | Metastable and stable transistion-metal silicide layer formation in Si and SiGe | |
dc.type | Oral presentation | |
dc.contributor.imecauthor | Caymax, Matty | |
dc.contributor.imecauthor | Pattyn, Hugo | |
dc.contributor.imecauthor | Vantomme, Andre | |
dc.source.peerreview | no | |
dc.source.conference | International Conference on the Application of the Mössbauer Effect; August 1999; Garmisch-Partenkirchen. | |
imec.availability | Published - imec |
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