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Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy

dc.contributor.authorDombrowski, Kai
dc.contributor.authorFischer, A.
dc.contributor.authorDietrich, B.
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorBender, Hugo
dc.contributor.authorPochet, Sandrine
dc.contributor.authorSimons, Veerle
dc.contributor.authorRooyackers, Rita
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorStuer, Cindy
dc.contributor.authorVan Landuyt, J.
dc.date.accessioned2021-10-06T11:05:48Z
dc.date.available2021-10-06T11:05:48Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3427
dc.sourceIIOimport
dc.titleDetermination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy
dc.typeProceedings paper
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorSimons, Veerle
dc.contributor.orcidimecSimons, Veerle::0000-0001-5714-955X
dc.source.peerreviewno
dc.source.beginpage357
dc.source.endpage360
dc.source.conferenceInternational Electron Devices Meeting. Technical digest; 5-8 Dec. 1999; Washington, D.C., USA.
imec.availabilityPublished - imec


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