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Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy
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Authors
Dombrowski, Kai
;
Fischer, A.
;
Dietrich, B.
;
De Wolf, Ingrid
;
Bender, Hugo
;
Pochet, Sandrine
;
Simons, Veerle
;
Rooyackers, Rita
;
Badenes, Gonçal
;
Stuer, Cindy
;
Van Landuyt, J.
Conference
International Electron Devices Meeting. Technical digest; 5-8 Dec. 1999; Washington, D.C., USA.
Title
Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy
Publication type
Proceedings paper
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