Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy

Publication:

1999

Proceedings Paper

Author(s)

Dombrowski, Kai

;

Fischer, A.

;

Dietrich, B.

;

;

;

Pochet, Sandrine

;

;

Rooyackers, Rita

;

Badenes, Gonçal

;

Stuer, Cindy

;

Van Landuyt, J.

2043 since deposited on 2021-10-06

Acq. date: 2026-05-01