Publication:

Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy

Date

1999
Proceedings Paper
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dc.contributor.authorDombrowski, Kai
dc.contributor.authorFischer, A.
dc.contributor.authorDietrich, B.
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorBender, Hugo
dc.contributor.authorPochet, Sandrine
dc.contributor.authorSimons, Veerle
dc.contributor.authorRooyackers, Rita
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorStuer, Cindy
dc.contributor.authorVan Landuyt, J.
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorSimons, Veerle
dc.contributor.orcidimecSimons, Veerle::0000-0001-5714-955X
dc.date.accessioned2021-10-06T11:05:48Z
dc.date.available2021-10-06T11:05:48Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3427
dc.source.beginpage357
dc.source.conferenceInternational Electron Devices Meeting. Technical digest; 5-8 Dec. 1999; Washington, D.C., USA.
dc.source.endpage360
dc.title

Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy

dc.typeProceedings paper
dspace.entity.typePublication
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