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dc.contributor.authorVandemaele, Michiel
dc.contributor.authorKaczer, Ben
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorStanojevic, Zlatan
dc.contributor.authorMakarov, Alexander
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorBury, Erik
dc.contributor.authorMertens, Hans
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-27T21:35:11Z
dc.date.available2021-10-27T21:35:11Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34288
dc.sourceIIOimport
dc.titleFull (Vg,Vd) bias space modeling of hot-carrier degradation in nanowire FETs
dc.typeProceedings paper
dc.contributor.imecauthorVandemaele, Michiel
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVandemaele, Michiel::0000-0003-0740-4115
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage7
dc.source.conference2019 IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate31/03/2019
dc.source.conferencelocationMonterey USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8720406
imec.availabilityPublished - open access


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