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Scaled, novel effective workfunction metal gate stacks for advanced Low-VT, gate-all-around vertically stacked nanosheet FETs with reduced vertical distance between sheets
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Authors
Veloso, Anabela
;
Simoen, Eddy
;
Oliveira, Alberto
;
Vaisman Chasin, Adrian
;
Chen, S.-C.
;
Lin, Y.
;
Miyashita, T.
;
Kim, M.
;
Jang, Doyoung
;
Ritzenthaler, Romain
;
Zhou, Daisy
;
Mertens, Hans
;
Pena, Vanessa
;
Santoro, Gaetano
;
Kenis, Karine
;
Sebaai, Farid
;
Mannaert, Geert
;
Devriendt, Katia
;
Hopf, Toby
;
Versluijs, Janko
;
Richard, Olivier
;
Machillot, Jerome
;
Yoshida, Naomi
;
Horiguchi, Naoto
Conference
2019 International Conference on Solid State Devices and Materials (SSDM 2019)
Title
Scaled, novel effective workfunction metal gate stacks for advanced Low-VT, gate-all-around vertically stacked nanosheet FETs with reduced vertical distance between sheets
Publication type
Proceedings paper
Embargo date
9999-12-31
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