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Scaled, novel effective workfunction metal gate stacks for advanced Low-VT, gate-all-around vertically stacked nanosheet FETs with reduced vertical distance between sheets

dc.contributor.authorVeloso, Anabela
dc.contributor.authorSimoen, Eddy
dc.contributor.authorOliveira, Alberto
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorChen, S.-C.
dc.contributor.authorLin, Y.
dc.contributor.authorMiyashita, T.
dc.contributor.authorKim, M.
dc.contributor.authorJang, Doyoung
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorZhou, Daisy
dc.contributor.authorMertens, Hans
dc.contributor.authorPena, Vanessa
dc.contributor.authorSantoro, Gaetano
dc.contributor.authorKenis, Karine
dc.contributor.authorSebaai, Farid
dc.contributor.authorMannaert, Geert
dc.contributor.authorDevriendt, Katia
dc.contributor.authorHopf, Toby
dc.contributor.authorVersluijs, Janko
dc.contributor.authorRichard, Olivier
dc.contributor.authorMachillot, Jerome
dc.contributor.authorYoshida, Naomi
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-27T22:18:33Z
dc.date.available2021-10-27T22:18:33Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34345
dc.sourceIIOimport
dc.titleScaled, novel effective workfunction metal gate stacks for advanced Low-VT, gate-all-around vertically stacked nanosheet FETs with reduced vertical distance between sheets
dc.typeProceedings paper
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorJang, Doyoung
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorPena, Vanessa
dc.contributor.imecauthorSantoro, Gaetano
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorHopf, Toby
dc.contributor.imecauthorVersluijs, Janko
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorMachillot, Jerome
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage559
dc.source.endpage560
dc.source.conference2019 International Conference on Solid State Devices and Materials (SSDM 2019)
dc.source.conferencedate2/09/2019
dc.source.conferencelocationNagoya Japan
imec.availabilityPublished - open access


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